Characteristics of hetero-interfaces between MnAs films and Mn-Zn ferrite

被引：4

作者：

Ikeda, T

Fujioka, H

Ono, K

Katada, H

Ito, S

Oshima, M

Yoshimoto, M

Koinuma, H

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268653, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 235卷 / 1-4期

关键词：

interfaces; reflection high energy electron diffraction; molecular beam epitaxy; arsenates; magnetic materials;

D O I：

10.1016/S0022-0248(01)01752-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the hetero-interface between molecular beam epitaxy grown MnAs thin films and Mn-Zn ferrite substrates using reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). The RHEED observations have shown that the mismatch between MnAs and Mn-Zn ferrite is fully relaxed at the film thickness of <16 monolayers (MLs). XPS analyses have revealed that MnAs grows two-dimensionally from the early stage. Although we have observed a slight outdiffusion of Fe from the ferrite substrate, outdiffusions of Zn and O from the substrate are negligible. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：555 / 560

页数：6

共 9 条

[1] EPITAXIAL FERROMAGNETIC MNAS THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON SI(001) SUBSTRATES [J].