Fabrication of in-plane aligned YBCO films on polycrystalline Ni tapes buffered with surface-oxidized NiO layers

被引:88
作者
Matsumoto, K [1 ]
Kim, SB [1 ]
Wen, JG [1 ]
Hirabayashi, I [1 ]
Watanabe, T [1 ]
Uno, N [1 ]
Ikeda, M [1 ]
机构
[1] ISTEC, Supercond Res Lab, Nagoya, Aichi 4568587, Japan
关键词
D O I
10.1109/77.784687
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Strongly in-plane aligned, c-axis oriented YBCO films were successfully grown on polycrystalline nickel tapes buffered with (100)-oriented NiO layers. The in-plane and out-of-plane alignments of the NiO layer were achieved by a surface-oxidation epitaxy (SOE) technique using a {100}<001> cube-textured nickel tape. The in-plane textures of NiO layers fabricated so far with the full width half maximum (FWHM) values of 11-13 degrees ale sufficient for the epitaxial growth of high-J(c) YBCO films. Pulsed laser deposited YBCO layers on the NiO/Ni tapes were not only c-axis oriented with respect to the tape surface, but also strongly in-plane aligned. The YBCO films on NiO/Ni tapes have a zero resistance T-c=87K and J(c)=10(4)-10(5)A/cm(2) at 77K.
引用
收藏
页码:1539 / 1542
页数:4
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