Preparation of Cu2ZnSnS4 thin films by sulfurization of stacked metallic layers

被引：184

作者：

Araki, Hideaki ^{[1
]}

Mikaduki, Aya ^{[1
]}

Kubo, Yuki ^{[1
]}

Sato, Tatsuhiro ^{[1
]}

Jimbo, Kazuo ^{[1
]}

Maw, Win Shwe ^{[1
]}

Katagiri, Hironori ^{[1
]}

Yamazaki, Makoto ^{[1
]}

Oishi, Koichiro ^{[1
]}

Takeuchi, Akiko ^{[1
]}

机构：

[1] Nagaoka Natl Coll Technol, Niigata 9408532, Japan

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 04期

关键词：

Cu2ZnSnS4; Solar cells; Sulfurization; E-B evaporated precursors;

D O I：

10.1016/j.tsf.2008.09.058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stacked precursors of Cu. Sri, and Zn were fabricated on glass/Mo substrates by electron beam evaporation. Six kinds of precursors with different stacking sequences were prepared by sequential evaporation of Cu, Sri, and Zn with substrate heating. The precursors were sulfurized at temperatures of 560 degrees C for 2 h in an atmosphere of N-2+sulfur vapor to fabricate Cu2ZnSnS4 (CZTS) thin films for solar cells. The sulfurized films exhibited X-ray diffraction peaks attributable to CZTS. Solar cells using CZTS thin films prepared from six kinds of precursors were fabricated. As a result, the solar cell using a CZTS thin film produced by sulfurization of the Mo/Zn/Cu/Sn precursor exhibited an open-circuit voltage of 478 mV, a short-circuit current of 9.78 mA/cm(2), a fill factor of 0.38, and a conversion efficiency of 1.79%. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：1457 / 1460

页数：4

共 12 条

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