Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors

被引：476

作者：

Katagiri, H

Sasaguchi, N

Hando, S

Hoshino, S

Ohashi, J

Yokota, T

机构：

[1] Department of Electrical Engineering, Nagaoka Natl. College of Technology, 888 Nishikatakai, Nagaoka

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1997年 / 49卷 / 1-4期

关键词：

Cu2ZnSnS4; thin films; sulfurization; E-B evaporated precursors;

D O I：

10.1016/S0927-0248(97)00119-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

By sulfurization of E-B evaporated precursors, CZTS(Cu2ZnSnS4) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 10(4) cm(-1). The resistivity was in the the order of 10(4) Ohm cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.

引用

页码：407 / 414

页数：8

共 4 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF STANNITE-TYPE QUATERNARY SEMICONDUCTOR THIN-FILMS [J].