Organic/inorganic hybrid complementary circuits based on pentacene and amorphous indium gallium zinc oxide transistors

被引：52

作者：

Na, Jong H. ^{[1
]}

Kitamura, M. ^{[1
]}

Arakawa, Y. ^{[1
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 21期

关键词：

amorphous semiconductors; field effect transistors; flexible electronics; gallium compounds; indium compounds; organic semiconductors; organic-inorganic hybrid materials; thin film transistors; zinc compounds;

D O I：

10.1063/1.3039779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Complementary inverters composed of pentacene for the p-channel thin-film transistors (TFTs) and amorphous indium gallium zinc oxide for the n-channel TFTs have been fabricated on glass substrates. The p- and n-channel TFTs have field-effect mobilities of 0.6 and 17.1 cm(2)/V s, respectively, and inverters yield a high gain of similar to 56. Complementary five-stage ring oscillator exhibits a good dynamic operation with an output frequency of 200 Hz at 10 V. Since both channel layers are stable in air and can be formed by room temperature deposition process, the hybrid circuits are applicable to flexible electronic devices.

引用

页数：3

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