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Erbium doping of Si via ion-beam-induced epitaxial crystallization: Another route to room-temperature photoluminescence

被引：4
作者：
Clerc, C
Bernas, H
Chaumont, J
Boucaud, P
Julien, F
Lourtioz, JM
机构：
[1] UNIV PARIS 09,INST ELECT FDTALE,CNRS,URA 22,F-91405 ORSAY,FRANCE
[2] CTR SPECTROMETRIE NUCL & SPECTROMETRIE MASSE,IN2P3,CNRS,F-91405 ORSAY,FRANCE
来源：
THIN SOLID FILMS | 1997年 / 294卷 / 1-2期
关键词：
rare earth metals; rutherford channeling; photoluminescence; ion beam crystallization;
D O I：
10.1016/S0040-6090(96)09234-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Si was doped with Er by combining Er ion implantation with ion-beam-induced epitaxial crystallization (IBIEC) at 320 degrees C and rapid thermal post-annealing at 980 degrees C. The structural evolution and the Er lattice site occupation during and after this treatment were studied via high-resolution electron microscopy (HREM) and Rutherford backscattering channelling (RBS/C). We obtain approximately 3 x 10(20) Er cm(-3) (about 40% of the implanted dose) in well-defined lattice sites. Photoluminescence (PL) occurs at room temperature. The effect of oxygen co-doping was studied by comparing the PL and lattice locations of Er in Czochralski (CZ), epitaxial, and oxygen-implanted epitaxial hosts.
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页码：223 / 226
页数：4
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