EVIDENCE OF INTERSTITIAL LOCATION OF ER ATOMS IMPLANTED INTO SILICON

被引：18

作者：

KOZANECKI, A

WILSON, RJ

SEALY, BJ

KACZANOWSKI, J

NOWICKI, L

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] SOLTAN INST NUCL STUDIES,PL-00681 WARSAW,POLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期

关键词：

D O I：

10.1063/1.115423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon implanted with 2 MeV Er ions at 350 degrees C is studied by Rutherford backscattering and channeling spectroscopy. Angular scans through the [100], [111], and [110] axial channels were measured, The angular scan profiles of erbium, in particular flux peak in the [110] scan profile suggest that the implanted Er atoms are predominantly located in the middle of the [110] channel (the hexagonal interstitial site), Monte Carlo simulations have been performed for the assumed hexagonal interstitial location of Er atoms. They well reproduce the experimental data, giving additional evidence for the location of Er atoms in the middle of the [110] channel. (C) 1995 American Institute of Physics.

引用

页码：1847 / 1849

页数：3

共 17 条

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