Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions

被引：69

作者：

Eneman, Geert ^{[1
,2
,3
]}

Wiot, Maxime ^{[1
]}

Brugere, Antoine ^{[1
]}

Sicart I Casain, O. Oriol ^{[1
]}

Sonde, Sushant ^{[1
]}

Brunco, David P. ^{[1
]}

De Jaeger, Brice ^{[1
]}

Satta, Alessandra ^{[1
]}

Hellings, Geert ^{[1
,3
]}

De Meyer, Kristin ^{[1
,3
]}

Claeys, Cor ^{[1
,3
]}

Meuris, Marc ^{[1
]}

Heyns, Marc M. ^{[1
]}

Simoen, Eddy ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Fund Sci Res Flanders, B-1000 Brussels, Belgium

[3] Katholieke Univ Leuven, Dept Elect Engn, INSYS Div, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 09期

关键词：

germanium; halo implant; leakage current; MOSFETs; p plus /n junction; trap-assisted tunneling (TAT);

D O I：

10.1109/TED.2008.927660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an analysis of junction leakage in heavily doped p+/n germanium junctions, targeted for short-channel transistor fabrication. There exists an optimal p+/n junction condition, with a doping concentration of I X 10(17) -5 x 10(17) cm(-3), where the area-leakage-current density is minimal. Use of a halo-implant condition optimized for our 125-nm gate-length pMOS devices shows less than one decade higher area leakage than the optimal p+/n junction. For even higher doping levels, the leakage density increases strongly. Therefore, careful optimization of p+/n junctions is needed for decananometer germanium transistors. The junction leakage shows good agreement with electrical simulations, although for some implant conditions, more adequate implant models are required. Finally, it is shown that the area-junction static-power consumption for the best junctions remains below the power-density specifications for high-performance applications.

引用

页码：2287 / 2296

页数：10

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