Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

被引：269

作者：

Sinsermsuksakul, Prasert ^{[1
]}

Hartman, Katy ^{[2
]}

Kim, Sang Bok ^{[1
]}

Heo, Jaeyeong ^{[1
]}

Sun, Leizhi ^{[1
]}

Park, Helen Hejin ^{[1
]}

Chakraborty, Rupak ^{[2
]}

Buonassisi, Tonio ^{[2
]}

Gordon, Roy G. ^{[1
]}

机构：

[1] Harvard Univ, Cambridge, MA 02138 USA

[2] MIT, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 05期

基金：

美国国家科学基金会;

关键词：

THIN-FILMS; DEPOSITION; PHOTOVOLTAICS;

D O I：

10.1063/1.4789855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O, S), using a device structure of soda-lime glass/Mo/SnS/Zn(O, S)/ZnO/ITO. A record efficiency was achieved for SnS-based thin-film solar cells by varying the oxygen-to-sulfur ratio in Zn(O, S). Increasing the sulfur content in Zn(O, S) raises the conduction band offset between Zn(O, S) and SnS to an optimum slightly positive value. A record SnS/Zn(O, S) solar cell with a S/Zn ratio of 0.37 exhibits short circuit current density (J(sc)), open circuit voltage (V-oc), and fill factor (FF) of 19.4mA/cm(2), 0.244 V, and 42.97%, respectively, as well as an NREL-certified total-area power-conversion efficiency of 2.04% and an uncertified active-area efficiency of 2.46%. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789855]

引用

页数：5

共 37 条

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