High performance InxCeyCo4Sb12 thermoelectric materials with in situ forming nanostructured InSb phase

被引：293

作者：

Li, Han ^{[2
]}

Tang, Xinfeng ^{[2
]}

Zhang, Qingjie ^{[2
]}

Uher, Ctirad ^{[1
]}

机构：

[1] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期

基金：

美国国家科学基金会;

关键词：

annealing; antimony alloys; cerium alloys; cobalt alloys; doping; grain size; indium alloys; nanostructured materials; phonons; plasma materials processing; quenching (thermal); sintering; thermal conductivity; thermoelectricity; FILLED SKUTTERUDITE ANTIMONIDES; ELECTRON; TRANSPORT;

D O I：

10.1063/1.3099804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

n-Type skutterudites InxCeyCo4Sb12 with in situ forming nanostructured InSb phase have been prepared by a melt-quench-anneal-spark plasma sintering method. Doping of In results in a nanostructured InSb phase with the grain size of 10-80 nm that is evenly distributed on the boundaries of the skutterudite matrix. The nanostructured InSb phase has a strong influence on phonon scattering and leads to a notable suppression of the lattice thermal conductivity of InxCeyCo4Sb12. The combined effect of In and Ce doping results in high performance skutterudite materials. The highest thermoelectric figure of merit ZT=1.43 is achieved at 800 K in the In0.2Ce0.15Co4Sb12 compound.

引用

页数：3

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