Wavelength dependent photoresponse in YBCO thin-film systems

被引:1
作者
Ruggiero, ST [1 ]
Mischke, MP
Tanner, CE
Wilson, AJ
Vale, LR
Rudman, DA
机构
[1] Univ Notre Dame, Notre Dame, IN 46556 USA
[2] Univ Wisconsin, Platteville, WI 53818 USA
[3] Natl Inst Stand & Technol, Boulder, CO 80303 USA
基金
美国国家科学基金会;
关键词
D O I
10.1109/77.783705
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present results on the structures photoresponse of YBCO narrow-line structures with deliberately broadened resistive transitions. We have explored the photoresponse of these systems as a function of temperature, bias current and power at wavelengths of 0.670, 0.850 and 10.6 mu m and at frequencies from 3 to 10(5) Hz at 0.670 mu m. The response was bolometric in nature in the vicinity of T-c (R similar to 30V/W). However, the response below T-c shows significant enhancement at 0.670 mu m, The wavelength regime of the enhancement suggests the participation of transient photodoping of the material or related phenomena.
引用
收藏
页码:3182 / 3185
页数:4
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