An analytical thermal noise model of deep submicron MOSFET's

被引：84

作者：

Klein, P ^{[1
]}

机构：

[1] Infineon Technol, Technol Dev Dept, D-81609 Munich, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 08期

关键词：

modeling; MOSFET's; noise;

D O I：

10.1109/55.778156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model for circuit simulation to describe the channel thermal noise in MOSFET's for all channel length down to deep submicron is presented and verified by measurements. Contrary to the thermal equilibrium assumption, this model includes the influence of the increasing electrical field with downscaling on the channel carrier (electron, hole) equivalent noise temperature. If not taken into account, simulation errors of up to 100% and more in the thermal noise of half micron transistors and below occur.

引用

页码：399 / 401

页数：3

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