Observation of nanosized cap structures on 6H-SiC(000(1) over bar) substrates by ultrahigh-vacuum scanning tunneling microscopy

被引:12
作者
Bang, H
Ito, Y
Kawamura, Y
Hosoda, E
Yoshida, C
Maruyama, T
Naritsuka, S
Kusunoki, M
机构
[1] Meijo Univ, 21st Century COE Program, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[3] FCT Cent Res Dev, Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 1A期
关键词
carbon nanotube; 6H-SiC; scanning tunneling microscopy;
D O I
10.1143/JJAP.45.372
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanosized cap structures on a thermally treated 6H-SiC(000 (1) over bar) substrate were investigated using atomic-resolution ultrahigh-vacuum scanning tunneling microscopy (UHV-STM). Hexagonal carbon networks, partly composed of pentagons, were clearly observed on the surface of the cap structures for a sample annealed at 1250 degrees C, in which carbon nanotubes (CNTs) had negligibly grow into the SiC substrate. Comparing their sizes and shapes with those annealed at 1350 degrees C, the cap structures were considered to be the initial state of carbon nanotube (CNT) growth which determines the tube diameters of the final grown CNTs.
引用
收藏
页码:372 / 374
页数:3
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