SiO2 and Si etching in fluorocarbon plasmas:: A detailed surface model coupled with a complete plasma and profile simulator.

被引：6

作者：

Gogolides, E

Vauvert, P

Courtin, Y

Kokkoris, G

Pelle, R

Boudouvis, A

Turban, G

机构：

[1] Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Attiki

[2] Dept. of Chem. Eng., Zographou Campus, Nat. Tech. Univ. of Athens, Attiki

[3] IMN, Lab. de Plasma, 2 Rue de la Houssiniere, 44072

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00091-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A surface model for SiO2 and Si etching in fluorocarbon plasmas is presented, taking into account polymer deposition. The polymer, the CFx, and the F surface coverage is calculated, as well as the etching yields and rates. Transition from deposition to etching when ion energy or F atom flux increases is observed, and compares well with experimental data. The surface model is coupled to a complete plasma simulator, which also includes the plasma physics, plasma chemistry and profile evolution. The simulator is also briefly described.

引用

页码：311 / 314

页数：4

共 4 条

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