共 27 条
Negative thermal quenching behavior and long luminescence lifetime of surface-state related green emission in ZnO nanorods
被引:45
作者:

He, Haiping
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Ye, Zhizhen
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Lin, Shisheng
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h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Zhao, Binghui
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Huang, Jingyun
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

Tang, Haiping
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Baoji Univ Arts & Sci, Dept Mech & Elect Engn, Baoji 721007, Shannxi, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
机构:
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Baoji Univ Arts & Sci, Dept Mech & Elect Engn, Baoji 721007, Shannxi, Peoples R China
基金:
中国国家自然科学基金;
关键词:
D O I:
10.1021/jp8023099
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
An experimental study of the luminescence intensity and time decay of the green band (GB) in ZnO nanorods as a function of temperature is reported. The GB intensity shows a negative thermal quenching behavior in the temperature range of 100-200 K. The increase of intensity is accompanied by a remarkable increase of lifetime with a maximum of similar to 1.7 ms at 150 K, which is much longer than those documented values. We suggest that a multiple trapping-detrapping mechanism is responsible for the long lifetime. The results indicate that the surface state greatly influences the dynamics of the GB in ZnO nanostructures.
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页码:14262 / 14265
页数:4
相关论文
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