Broadband ZnO single-nanowire light-emitting diode

被引:507
作者
Bao, Jiming
Zimmler, Mariano A.
Capasso, Federico [1 ]
Wang, Xiaowei
Ren, Z. F.
机构
[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA
关键词
D O I
10.1021/nl061080t
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present a novel technique for reliable electrical injection into single semiconductor nanowires for light-emitting diodes and lasers. The method makes use of a high-resolution negative electron-beam resist and direct electron-beam patterning for the precise fabrication of a metallic top contact along the length of the nanowire, while a planar substrate is used as a bottom contact. It can be applied to any nanowire structure with an arbitrary cross section. We demonstrate this technique by constructing the first zinc oxide single-nanowire light-emitting diode. The device exhibits broad sub-bandgap emission at room temperature.
引用
收藏
页码:1719 / 1722
页数:4
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