1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes

被引:175
作者
Curry, RJ [1 ]
Gillin, WP [1 ]
机构
[1] Univ London Queen Mary & Westfield Coll, Dept Phys, London E1 4NS, England
关键词
D O I
10.1063/1.124700
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic light-emitting diodes have been fabricated using erbium tris(8-hydroxyquinoline) as the emitting layer and N, N-'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine as the hole-transporting layer. Room-temperature electroluminescence was observed at 1.54 mu m due to intra-atomic transitions between the I-4(13/2) and I-4(15/2) levels in the Er3+ ion. These results suggest a possible route to producing a silicon-compatible 1.54 mu m source technology. (C) 1999 American Institute of Physics. [S0003-6951(99)02336-0].
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页码:1380 / 1382
页数:3
相关论文
共 6 条
[1]   Erbium (III) tris(8-hydroxyquinoline) (ErQ):: A potential material for silicon compatible 1.5 μm emitters [J].
Gillin, WP ;
Curry, RJ .
APPLIED PHYSICS LETTERS, 1999, 74 (06) :798-799
[2]   SILICON COMPATIBLE ORGANIC LIGHT-EMITTING DIODE [J].
KIM, HH ;
MILLER, TM ;
WESTERWICK, EH ;
KIM, YO ;
KWOCK, EW ;
MORRIS, MD ;
CERULLO, M .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1994, 12 (12) :2107-2113
[3]   Erbium implanted thin film photonic materials [J].
Polman, A .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :1-39
[4]   DENATURED TRIS(QUINOLIN-8-OLATO)ALUMINIUM - A NEW MATERIAL FOR ORGANIC ELECTROLUMINESCENT CELLS [J].
SANO, K ;
KAWATA, Y ;
URANO, TI ;
MORI, Y .
JOURNAL OF MATERIALS CHEMISTRY, 1992, 2 (07) :767-768
[5]   ORGANIC ELECTROLUMINESCENT DIODES [J].
TANG, CW ;
VANSLYKE, SA .
APPLIED PHYSICS LETTERS, 1987, 51 (12) :913-915
[6]   Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode [J].
Zhou, X ;
He, J ;
Liao, LS ;
Lu, M ;
Xiong, ZH ;
Ding, XM ;
Hou, XY ;
Tao, FG ;
Zhou, CE ;
Lee, ST .
APPLIED PHYSICS LETTERS, 1999, 74 (04) :609-611