Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode

被引：84

作者：

Zhou, X ^{[1
]}

He, J

Liao, LS

Lu, M

Xiong, ZH

Ding, XM

Hou, XY

Tao, FG

Zhou, CE

Lee, ST

机构：

[1] Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China

[2] Fudan Univ, Dept Chem, Shanghai 200433, Peoples R China

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.123161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication of a vacuum-deposited light-emitting device which emits light from its top surface through an Al cathode using p-type doped silicon as the anode material. Enhanced hole injection is clearly demonstrated from the p-Si anode as compared to the indium-tin-oxide (ITO) anode. The mechanisms of hole injection from both the p-Si and ITO anodes into the organic layer are investigated and a possible model based on anode surface band bending is proposed. During the operation of the organic light-emitting device, the surface band bending of the anode plays a very important role in modifying the interfacial barrier height between the anode and the organic layer. (C) 1999 American Institute of Physics. [S0003-6951(99)01604-6].

引用

页码：609 / 611

页数：3

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