Dephasing in the gain region of II-VI semiconductor nanocrystals

被引：9

作者：

Giessen, H

Fluegel, B

Mohs, G

Hu, YZ

Peyghambarian, N

Woggon, U

Klingshirn, C

Thomas, P

Koch, SW

机构：

[1] UNIV ARIZONA,CTR OPT SCI,TUCSON,AZ 85721

[2] UNIV KARLSRUHE,INST ANGEW PHYS,D-76128 KARLSRUHE,GERMANY

[3] UNIV MARBURG,FACHBEREICH PHYS,D-35112 MARBURG,GERMANY

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1996年 / 13卷 / 05期

关键词：

D O I：

10.1364/JOSAB.13.001039

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate the dephasing times in highly excited CdSe and CdS0.3Se0.7 nanocrystals by spectral hole burning throughout the gain region. The energy dependence of the phasing time T-2 is compared between quantum dots in the strong-confinement regime and bulklike microcrystals. T-2 in strongly confined quantum dots remains rather constant, whereas the bulklike sample shows a continuous increase of T-2 toward the transparency point. This observation is attributed to the different gain mechanisms in the strong and the weak quantum-confinement regimes. (C) 1996 Optical Society of America.

引用

收藏

页码：1039 / 1044

页数：6

相关论文

共 17 条

[1] CHIRP MEASUREMENT OF LARGE-BANDWIDTH FEMTOSECOND OPTICAL PULSES USING 2-PHOTON ABSORPTION [J].

ALBRECHT, TF ;

SEIBERT, K ;

KURZ, H .

OPTICS COMMUNICATIONS, 1991, 84 (5-6) :223-227

[2] INFLUENCE OF COULOMB INTERACTION ON THE PHOTON-ECHO IN DISORDERED SEMICONDUCTORS [J].

BENNHARDT, D ;

THOMAS, P ;

WELLER, A ;

LINDBERG, M ;

KOCH, SW .

PHYSICAL REVIEW B, 1991, 43 (11) :8934-8945

[3] CARRIER-CARRIER SCATTERING AND OPTICAL DEPHASING IN HIGHLY EXCITED SEMICONDUCTORS [J].

BINDER, R ;

SCOTT, D ;

PAUL, AE ;

LINDBERG, M ;

HENNEBERGER, K ;

KOCH, SW .

PHYSICAL REVIEW B, 1992, 45 (03) :1107-1115

[4] STRONG OPTICAL NONLINEARITIES AND LASER-EMISSION OF SEMICONDUCTOR MICROCRYSTALS [J].

DNEPROVSKII, VS ;

KLIMOV, VI ;

OKOROKOV, DK ;

VANDYSHEV, YV .

SOLID STATE COMMUNICATIONS, 1992, 81 (03) :227-230

[5] ABSORPTION AND INTENSITY-DEPENDENT PHOTOLUMINESCENCE MEASUREMENTS ON CDSE QUANTUM DOTS - ASSIGNMENT OF THE 1ST ELECTRONIC-TRANSITIONS [J].

EKIMOV, AI ;

HACHE, F ;

SCHANNEKLEIN, MC ;

RICARD, D ;

FLYTZANIS, C ;

KUDRYAVTSEV, IA ;

YAZEVA, TV ;

RODINA, AV ;

EFROS, AL .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1993, 10 (01) :100-107

[6]

GIESSEN H, IN PRESS J CHEM PHYS

[7]

HU Y, IN PRESS PHYS REV B

[8] CARRIER-CARRIER SCATTERING IN A DEGENERATE ELECTRON-SYSTEM - STRONG INHIBITION OF SCATTERING NEAR THE FERMI EDGE [J].

KIM, DS ;

SHAH, J ;

CUNNINGHAM, JE ;

DAMEN, TC ;

SCHMITTRINK, S ;

SCHAFER, W .

PHYSICAL REVIEW LETTERS, 1992, 68 (18) :2838-2841

[9] SPECTRAL HOLE-BURNING IN THE GAIN REGION OF AN INVERTED SEMICONDUCTOR [J].

MEISSNER, K ;

FLUEGEL, B ;

GIESSEN, H ;

MCGINNIS, BP ;

PAUL, A ;

BINDER, R ;

KOCH, SW ;

PEYGHAMBARIAN, N ;

GRUN, M ;

KLINGSHIRN, C .

PHYSICAL REVIEW B, 1993, 48 (20) :15472-15475

[10] CARRIER DEPHASING IN THE GAIN REGION OF AN INVERTED SEMICONDUCTOR [J].

MEISSNER, K ;

FLUEGEL, B ;

GIESSEN, H ;

MOHS, G ;

BINDER, R ;

KOCH, SW ;

PEYGHAMBARIAN, N .

PHYSICAL REVIEW B, 1994, 50 (23) :17647-17650