SPECTRAL HOLE-BURNING IN THE GAIN REGION OF AN INVERTED SEMICONDUCTOR

被引：19

作者：

MEISSNER, K ^{[1
]}

FLUEGEL, B ^{[1
]}

GIESSEN, H ^{[1
]}

MCGINNIS, BP ^{[1
]}

PAUL, A ^{[1
]}

BINDER, R ^{[1
]}

KOCH, SW ^{[1
]}

PEYGHAMBARIAN, N ^{[1
]}

GRUN, M ^{[1
]}

KLINGSHIRN, C ^{[1
]}

机构：

[1] UNIV KAISERSLAUTERN,FACHBEREICH PHYS,W-6750 KAISERSLAUTERN,GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.48.15472

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the observation and numerical calculations of femtosecond gain dynamics in an optically excited, CdSe epitaxial sample at low temperature. Spectral hole burning is clearly observed around the pump as it is tuned through the gain region. The pump-probe experiments agree well with our theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrier-LO-phonon scattering.

引用

页码：15472 / 15475

页数：4

共 18 条

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