Low cost patterning of poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) films to increase organic photovoltaic device efficiency

被引：32

作者：

Emah, J. B. ^{[1
]}

Curry, R. J. ^{[1
]}

Silva, S. R. P. ^{[1
]}

机构：

[1] Univ Surrey, Nanoelect Ctr, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2973342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A low-cost lithographic technique to pattern poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) films with 10 nm deep features of 700 nm periodicity is demonstrated. The use of these patterned films in poly (3-hexylthiophene) : [6,6]-phenylC(61)-butyric acid methyl ester organic photovoltaic devices leads to an increase in short circuit current (J(sc)), fill factor, and power conversion efficiency (PCE) with only a slight reduction in open circuit voltage. Patterning the PEDOT: PSS at 150 degrees C increases Jsc from 2.44 to 3.03 mA/cm(2) improving the PCE from 0.63% to 0.81% with similar increases due to patterning also being obtained at other temperatures. (c) 2008 American Institute of Physics.

引用

页数：3

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