Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

被引：8

作者：

Na, H. J. ^{[2
]}

Lee, J. C. ^{[2
]}

Heh, D. ^{[3
]}

Sivasubramani, P. ^{[3
]}

Kirsch, P. D. ^{[3
]}

Oh, J. W. ^{[3
]}

Majhi, P. ^{[3
]}

Rivillon, S. ^{[4
]}

Chabal, Y. J. ^{[4
]}

Lee, B. H. ^{[5
]}

Choi, R. ^{[1
]}

机构：

[1] Inha Univ, Inchon 402751, South Korea

[2] Univ Texas Austin, MRC, Austin, TX 78758 USA

[3] SEMATECH, Austin, TX 78741 USA

[4] Rutgers State Univ, Piscataway, NJ 08854 USA

[5] Gwangju Inst Sci & Technol, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

关键词：

germanium compounds; hafnium compounds; high-k dielectric thin films; interface states; MOSFET; passivation; semiconductor-insulator boundaries; silicon compounds; tungsten compounds;

D O I：

10.1063/1.3028025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate methodologies to improve the interface characteristics between a germanium (Ge) substrate and high-k gate dielectrics. GeON and SiOx were investigated as passivating layers on a Ge surface. Smaller hysteresis and interface state density (D-it) were obtained using SiOx interface layer and p-type metal oxide semiconductor field effect transistors (MOSFETs) fabricated with a gate stack of Ge/SiOx/HfSiO/WN showed about two times higher effective mobility compared to universal Si/SiO2 MOSFET. Because the formation of GeOx at the interface resulted in higher hysteresis and equivalent oxide thickness, the effective suppression of growth of unstable GeOx by SiOx interface layer contributed to the good device characteristics of the fabricated devices.

引用

页数：3

共 13 条

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