HfO2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers:: Structure and interfacial stability -: art. no. 221906

被引：42

作者：

Seo, JW ^{[1
]}

Dieker, C

Locquet, JP

Mavrou, G

Dimoulas, A

机构：

[1] Ecole Polytech Fed Lausanne, Inst Phys Complex Matter, CH-1015 Lausanne, Switzerland

[2] PSE, MosBeam Fdn, CH-1015 Lausanne, Switzerland

[3] IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

[4] NCSR Demokritos, Inst Mat Sci, MBE Lab, GR-15310 Athens, Greece

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 22期

关键词：

D O I：

10.1063/1.2137897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the growth of HfO2 thin films on (100)Ge by molecular beam epitaxy. By means of transmission electron microscopy, the structural characteristics of the films grown on clean Ge surfaces are compared with those grown on passivation layers of GeOx and GeOxNy. The interface was found to be very flat and thin, with an interfacial layer one or two monolayer thick. However, traces of Ge in the oxide have been detected when deposited on either one of the interfacial layers, which can be explained by the instability of the interfacial layers grown with an atomic oxygen/nitrogen beam, prior to the HfO2 deposition.(c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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