Resonant low-energy electron scattering on short-range impurities in graphene

被引：62

作者：

Basko, D. M. ^{[1
]}

机构：

[1] Int Sch Adv Studies SISSA, I-34014 Trieste, Italy

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.78.115432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resonant scattering of electrons with low energies (as compared to the bandwidth) on a single neutral short-range impurity in graphene is analyzed theoretically, taking into account the valley degeneracy. Resonances dramatically increase the scattering cross section and introduce a strong energy dependence. Analysis of the tight-binding model shows that resonant scattering is typical for generic impurities as long as they are sufficiently strong (the potential is of the order of the electron bandwidth or higher).

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页数：10

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