Nonvolatile switching in graphene field-effect devices

被引：138

作者：

Echtermeyer, Tim J. ^{[1
]}

Lemme, Max C. ^{[1
]}

Baus, Matthias ^{[1
]}

Szafranek, Bartholomaeus N. ^{[1
]}

Geim, Andre K. ^{[2
]}

Kurz, Heinrich ^{[1
]}

机构：

[1] AMO GmbH, AMICA, D-52074 Aachen, Germany

[2] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 08期

关键词：

field-effect transistor (FET); graphene; memory; MOSFET; nonvolatile; switch;

D O I：

10.1109/LED.2008.2001179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The absence of a band gap in graphene restricts its straightforward application as a channel material in field-effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field-effect devices (FEDs) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "ON-state" and an insulating "OFF-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to nonvolatile memories and novel neuromorphic processing concepts.

引用

页码：952 / 954

页数：3

共 22 条

[1] Carbon-based electronics
Avouris, Phaedon
Chen, Zhihong
Perebeinos, Vasili
[J]. NATURE NANOTECHNOLOGY, 2007, 2 (10) : 605 - 615
[2] Ultrahigh electron mobility in suspended graphene
Bolotin, K. I.
Sikes, K. J.
Jiang, Z.
Klima, M.
Fudenberg, G.
Hone, J.
Kim, P.
Stormer, H. L.
[J]. SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) : 351 - 355
[3] Intrinsic and extrinsic performance limits of graphene devices on SiO2
Chen, Jian-Hao
Jang, Chaun
Xiao, Shudong
Ishigami, Masa
Fuhrer, Michael S.
[J]. NATURE NANOTECHNOLOGY, 2008, 3 (04) : 206 - 209
[4] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Das, A.
Pisana, S.
Chakraborty, B.
Piscanec, S.
Saha, S. K.
Waghmare, U. V.
Novoselov, K. S.
Krishnamurthy, H. R.
Geim, A. K.
Ferrari, A. C.
Sood, A. K.
[J]. NATURE NANOTECHNOLOGY, 2008, 3 (04) : 210 - 215
[5] ECHTENNEYER TJ, ARXIV07122026V1
[6] Simulation of graphene nanoribbon field-effect transistors
Fiori, Gianluca
Iannaccone, Giuseppe
[J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) : 760 - 762
[7] A chemical route to graphene for device applications
Gilje, Scott
Han, Song
Wang, Minsheng
Wang, Kang L.
Kaner, Richard B.
[J]. NANO LETTERS, 2007, 7 (11) : 3394 - 3398
[8] Electronic transport properties of individual chemically reduced graphene oxide sheets
Gomez-Navarro, Cristina
Weitz, R. Thomas
Bittner, Alexander M.
Scolari, Matteo
Mews, Alf
Burghard, Marko
Kern, Klaus
[J]. NANO LETTERS, 2007, 7 (11) : 3499 - 3503
[9] Transport measurements across a tunable potential barrier in graphene
Huard, B.
Sulpizio, J. A.
Stander, N.
Todd, K.
Yang, B.
Goldhaber-Gordon, D.
[J]. PHYSICAL REVIEW LETTERS, 2007, 98 (23)
[10] Epitaxial graphene transistors on SIC substrates
Kedzierski, Jakub
Hsu, Pei-Lan
Healey, Paul
Wyatt, Peter W.
Keast, Craig L.
Sprinkle, Mike
Berger, Claire
de Heer, Walt A.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 2078 - 2085

← 1 2 3 →