Ultrahigh electron mobility in suspended graphene

被引：6637

作者：

Bolotin, K. I. ^{[1
]}

Sikes, K. J. ^{[2
]}

Jiang, Z. ^{[1
,4
]}

Klima, M. ^{[3
]}

Fudenberg, G. ^{[1
]}

Hone, J. ^{[3
]}

Kim, P. ^{[1
]}

Stormer, H. L. ^{[1
,2
,5
]}

机构：

[1] Columbia Univ, Dept Phys, New York, NY 10027 USA

[2] Columbia Univ, Dept Appl Phys, New York, NY 10027 USA

[3] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA

[4] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[5] Alcatel Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 146卷 / 9-10期

基金：

美国国家科学基金会;

关键词：

graphene; nanofabrication; electronic transport;

D O I：

10.1016/j.ssc.2008.02.024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have achieved mobilities in excess of 200,000 cm(2) V(-1)s(-1) at electron densities of similar to 2x10(11) cm(-2) by suspending single layer graphene. Suspension similar to 150 nin above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a significant improvement of electrical transport. Concomitant with large mobility enhancement, the widths of the characteristic Dirac peaks are reduced by a factor of 10 compared to traditional, nonsuspended devices. This advance should allow for accessing the intrinsic transport properties of graphene. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：351 / 355

页数：5

共 24 条

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