Making graphene visible

被引:1499
作者
Blake, P.
Hill, E. W.
Castro Neto, A. H.
Novoselov, K. S.
Jiang, D.
Yang, R.
Booth, T. J.
Geim, A. K.
机构
[1] Univ Manchester, Dept Comp Sci, Manchester M13 9PL, Lancs, England
[2] Boston Univ, Dept Phys, Boston, MA 02215 USA
[3] Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1063/1.2768624
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microfabrication of graphene devices used in many experimental studies currently relies on the fact that graphene crystallites can be visualized using optical microscopy if prepared on top of Si wafers with a certain thickness of SiO2. The authors study graphene's visibility and show that it depends strongly on both thickness of SiO2 and light wavelength. They have found that by using monochromatic illumination, graphene can be isolated for any SiO2 thickness, albeit 300 nm (the current standard) and, especially, approximate to 100 nm are most suitable for its visual detection. By using a Fresnel-law-based model, they quantitatively describe the experimental data. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 15 条
  • [1] ABERGEL DSL, ARXIVCONDMAT07050091
  • [2] ANDERS H, 1967, THIN FILMS OPTICS, P18
  • [3] CASIRAGHI C, ARXIVCONDMAT07052645
  • [4] Raman spectrum of graphene and graphene layers
    Ferrari, A. C.
    Meyer, J. C.
    Scardaci, V.
    Casiraghi, C.
    Lazzeri, M.
    Mauri, F.
    Piscanec, S.
    Jiang, D.
    Novoselov, K. S.
    Roth, S.
    Geim, A. K.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (18)
  • [5] The rise of graphene
    Geim, A. K.
    Novoselov, K. S.
    [J]. NATURE MATERIALS, 2007, 6 (03) : 183 - 191
  • [6] Electronic color charts for dielectric films on silicon
    Henrie, J
    Kellis, S
    Schultz, SM
    Hawkins, A
    [J]. OPTICS EXPRESS, 2004, 12 (07): : 1464 - 1469
  • [7] JUNG L, ARXIVCONDMAT07060029
  • [8] Neto A. H. C., 2007, PHYS WORLD, V19, P33, DOI DOI 10.1088/2058-7058/19/11/34
  • [9] Two-dimensional atomic crystals
    Novoselov, KS
    Jiang, D
    Schedin, F
    Booth, TJ
    Khotkevich, VV
    Morozov, SV
    Geim, AK
    [J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (30) : 10451 - 10453
  • [10] Electric field effect in atomically thin carbon films
    Novoselov, KS
    Geim, AK
    Morozov, SV
    Jiang, D
    Zhang, Y
    Dubonos, SV
    Grigorieva, IV
    Firsov, AA
    [J]. SCIENCE, 2004, 306 (5696) : 666 - 669