A new e-beam method for grey scale 3D optical elements.

被引：10

作者：

Kudryashov, VA

Prewett, PD

Michette, AG

机构：

[1] Microlectron. Technology Institute, Russian Academy of Sciences, 142432 Chernogolovka, Moscow dist.

[2] Central Microstructure Facility, Rutherford Appleton Lab. Chilton, Didcot

[3] Department of Physics, King's College London, Strand, London

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00064-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new e-beam lithography grey scale method has been developed for phase shift optical elements production. It could be used only for 3D elements with lateral dimensions of constant height regions much greater than the resist height and provides an extremely precise structure height control with a very high process latitude. Resist structure height in it is controlled not by the local dose but by the exposed cell area.

引用

页码：209 / 212

页数：4

共 3 条

[1] Proximity correction for e-beam patterned sub-500nm diffractive optical elements [J].