Photo-assisted anodic etching of GaN films in NaOH electrolyte with Cl ions

被引：4

作者：

Ohkubo, M ^{[1
]}

机构：

[1] Fukui Univ, Fac Engn, Fukui 9108507, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期

关键词：

GaN; NaOH; Cl ions; anodic etching; ultraviolet; gallium oxide;

D O I：

10.1016/S0921-5107(98)00382-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photo-assisted anodic etching of high quality n-GaN films grown by metalorganic chemical vapour deposition (MOCVD) on sapphire substrate using sodium hydroxide (NaOH) electrolyte at room temperature is reported. It is found that the presence of chloride ions in the NaOH electrolyte accelerates the rate of photo-assisted anodic etching of GaN films. The effect of adding chloride ions in the NaOH electrolyte is to reduce the extent of the formation of gallium oxide layer on the surface. It seems that the presence of chloride ions in the NaOH electrolyte plays an important role in the photo-assisted anodic etching of n-GaN films. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：355 / 357

页数：3

共 4 条

[1] REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS [J].