Temperature-dependent orientation of diamond films on titanium and structural evolution of interfacial layers

被引:12
作者
Cappuccio, G
Sessa, V
Terranova, ML
机构
[1] IST NAZL FIS NUCL,LAB NAZL FRASCATI,LAB DAFNE LUCE,I-00044 FRASCATI,ITALY
[2] UNIV ROMA TOR VERGATA,DIPARTIMENTO SCI & TECNOL CHIM,I-00133 ROME,ITALY
[3] CONSORZIO INTERUNIV CHIM MAT,I-00133 ROME,ITALY
关键词
D O I
10.1063/1.116977
中图分类号
O59 [应用物理学];
学科分类号
摘要
X-ray diffraction analytical techniques have been used to investigate the influence of the deposition temperature (650-850 degrees C) on the composition and microstructure of the transition layers formed at the interface between titanium substrates and diamond thin films. The diamond coatings were produced by hot-filament chemical vapor deposition using a 1% methane/hydrogen mixture. X-ray diffraction analysis, performed both through theta-2 theta scans and at grazing incidence, allowed investigation of the crystallographic properties and of the structural evolution of the various phases (TiC, TiH2, alpha-Ti) generated inside the intermediate reaction layers. The temperature-dependent orientation of diamond crystallites is discussed with reference to the complex structure of these interfacial layers. (C) 1996 American Institute of Physics.
引用
收藏
页码:4176 / 4178
页数:3
相关论文
共 29 条
[1]   MORPHOMETRIC ANALYSIS OF DIAMOND CRYSTALS ELABORATED BY MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION - APPLICATION TO TEXTURED FILMS [J].
BARRAT, S ;
DIEGUEZ, I ;
MICHEL, H ;
BAUERGROSSE, E .
DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) :520-524
[2]   PREDICTION OF THE FEASIBILITY OF ORIENTED DIAMOND FILMS BY MICROWAVE PLASMA-ASSISTED CVD [J].
BARRAT, S ;
BAUERGROSSE, E .
DIAMOND AND RELATED MATERIALS, 1995, 4 (04) :419-424
[3]  
BURATTINI E, 1993, MATER SCI FORUM, V133, P309
[4]   Microstructure and phase morphology of diamond thin films by synchrotron radiation X-ray diffraction [J].
Cappuccio, G ;
Leoni, M ;
Scardi, P ;
Sessa, V ;
Terranova, ML .
ADVANCES IN CRYSTAL GROWTH, 1996, 203 :285-289
[5]  
CAPPUCCIO G, 1994, MATER SCI FORUM, V166, P325, DOI 10.4028/www.scientific.net/MSF.166-169.325
[6]   GROWTH-KINETICS OF (100), (110), AND (111) HOMOEPITAXIAL DIAMOND FILMS [J].
CHU, CJ ;
HAUGE, RH ;
MARGRAVE, JL ;
DEVELYN, MP .
APPLIED PHYSICS LETTERS, 1992, 61 (12) :1393-1395
[7]   TEXTURES AND MORPHOLOGIES OF CHEMICAL VAPOR-DEPOSITED (CVD) DIAMOND [J].
CLAUSING, RE ;
HEATHERLY, L ;
HORTON, LL ;
SPECHT, ED ;
BEGUN, GM ;
WANG, ZL .
DIAMOND AND RELATED MATERIALS, 1992, 1 (5-6) :411-415
[8]  
Cullity B.D., 1978, ELEMENTS XRAY DIFFRA, V2nd, P102
[9]  
FUJIMORI N, 1994, P ADV MAT 94, P146
[10]   EPITAXIAL DIAMOND THIN-FILMS ON (001) SILICON SUBSTRATES [J].
JIANG, X ;
KLAGES, CP ;
ZACHAI, R ;
HARTWEG, M ;
FUSSER, HJ .
APPLIED PHYSICS LETTERS, 1993, 62 (26) :3438-3440