MD simulation study of the sputtering process by high-energy gas cluster impact

被引：12

作者：

Aoki, Takaaki ^{[1
]}

Seki, Toshio ^{[2
]}

Ninomiya, Satoshi ^{[3
]}

Matsuo, Jiro ^{[3
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Kyoto Univ, Dept Nucl Engn, Kyoto 6018501, Japan

[3] Kyoto Univ, Quantum Sci & Engn Ctr, Kyoto 6110011, Japan

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 04期

关键词：

MD simulation; Cluster ion beam; Sputtering models;

D O I：

10.1016/j.apsusc.2008.05.008

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We performed molecular dynamics (MD) simulations to study the characteristic sputtering process with large cluster ion impact. The statistical properties of incident Ar and sputtered Si atoms were examined using 100 different MD simulations with Ar-1000 cluster impacting on a Si(0 0 1) target at a total acceleration energy of 50 keV. The results show that the kinetic energy distribution of Ar atoms after impact obeys the high-temperature Boltzmann distribution due to thermalization through high-density multiple collisions on the target. On the other hand, the kinetic energy distribution of sputtered target atoms demonstrates a hybrid model of thermalization and collision-cascade desorption processes. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：944 / 947

页数：4

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