The theory of the formation of multilayered thin films on solid surfaces

被引:4
作者
Dubrovskii, VG [1 ]
Sibirev, NV
Cirlin, GE
Ustinov, VM
机构
[1] Russian Acad Sci, St Petersburg Physicotech Ctr Sci & Educ, St Petersburg 195220, Russia
[2] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190083, Russia
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/S1063782606030018
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The growth of a dislocation-free thin film deposited on a solid surface from a gaseous phase is treated theoretically. The most commonly encountered process in which the growth follows the two-dimensional mechanism and each succeeding layer is formed on the covered areas of the preceding layer is considered. A self-consistent kinetic model of the film formation is developed. If the energy parameters of the system and the conditions of growth are known, the model makes it possible to calculate the structural characteristics of the system at the different stages of growth. The size distribution function of islands at the stage of their Separate growth, the perimeter of the layer boundary, the coverage of the surface at the stage of continuous layer formation. and the average height, as well as other parameters of the surface roughness of the three-dimensional film are determined. The algorithm of numerical calculations and the examples of the calculations for some model systems are presented The results can be used for the control and optimization of growth in various technological procedures of thin film deposition.
引用
收藏
页码:249 / 256
页数:8
相关论文
共 18 条
[1]  
Alferov Zh.I., 1998, FIZ TEKH POLUPROV, V32, P3
[2]  
Belenkii V.Z., 1980, Geometric-Probabilistic Models of Crystallization: A Phenomenological Approach
[3]  
Chernov A.A., 1984, Modern Crystallography III: Crystal Growth
[4]   The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy [J].
Cirlin, GE ;
Dubrovskii, VG ;
Sibirev, NV ;
Soshnikov, IP ;
Samsonenko, YB ;
Tonkikh, AA ;
Ustinov, VM .
SEMICONDUCTORS, 2005, 39 (05) :557-564
[5]  
CIRLIN GE, 1997, TECH PHYS LETT, V23, P154
[6]   Growth dynamics of a single-component crystalline thin film [J].
Dubrovskii, VG ;
Cirlin, GE .
TECHNICAL PHYSICS, 1997, 42 (11) :1365-1367
[7]   Growth kinetics of thin films formed by nucleation during layer formation [J].
Dubrovskii, VG ;
Cirlin, GE .
SEMICONDUCTORS, 2005, 39 (11) :1267-1274
[8]   Transition from thermodynamically to kinetically controlled regime of nucleation in a materially open system [J].
Dubrovskii, VG .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (39) :6929-6940
[9]   NUCLEATION AND GROWTH OF ADSORBED LAYER - SELF-CONSISTENT APPROACH BASED ON KOLMOGOROV-AVRAMI MODEL [J].
DUBROVSKII, VG .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1992, 171 (02) :345-356
[10]  
Filaretov A. G., 1991, Soviet Physics - Solid State, V33, P751