Direct-write deposition with a focused electron beam

被引：13

作者：

Fischer, M. ^{[1
]}

Wanzenboeck, H. D. ^{[1
]}

Gottsbachner, J. ^{[1
]}

Mueller, S. ^{[1
]}

Brezna, W. ^{[1
]}

Schramboeck, M. ^{[1
]}

Bertagnolli, E. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Solid Elect, A-1040 Vienna, Austria

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 4-9期

关键词：

electron beam induced deposition; silicon oxide; chemical vapor deposition;

D O I：

10.1016/j.mee.2006.01.035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of nanostructured dielectrics of high purity produced by electron beam induced deposition (EBID) was investigated. Additionally, the process parameters were optimized towards high deposition rate. Silicon oxide was chosen as exemplary dielectric. The deposition was performed with an electron microscope with a self-designed nozzle system. An organo-silicon precursor was used to deposit silicon oxide. The increase of the oxygen content and the reduction of carbon contaminations of the depositions were preformed by adding molecular oxygen. Patterns of large areas as well as nm-scale arrays were fabricated. To optimize the deposition rate the correlation between beam parameters and deposition rate was studied. It has been shown that this direct-write method allows obtaining arbitrary structures with superior material quality. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：784 / 787

页数：4

共 8 条

[1] Investigation of low temperature SiO2 plasma enhanced chemical vapor deposition [J].