Fabrication of field emitter array using focused ion and electron beam induced reaction

被引：30

作者：

Takai, M ^{[1
]}

Kishimoto, T

Morimoto, H

Park, YK

Lipp, S

Lehrer, C

Frey, L

Ryssel, H

Hosono, A

Kawabuchi, S

机构：

[1] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 560, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 560, Japan

[3] Fraunhofer Inst Integrierte Schaltungen B, D-91058 Erlangen, Germany

[4] Mitsubishi Elect Co, Adv Technol R&D Ctr, Amagasaki, Hyogo 661, Japan

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00105-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 30 keV dual beam system with focused ion and electron beams has been used to develop a fast fabrication process of field emitter arrays (FEAs). The gate opening was fabricated by reactive focused ion beam etching. Pt cathode tips were deposited through gate opening using electron beam induced chemical reaction. Pt tips fabricated in the over-etched Si FEA showed field emission. A prototype of a nanometer-sized FEA was fabricated using a dual beam technique with FIB etching and electron beam induced deposition.

引用

页码：453 / 456

页数：4

共 5 条

[1]

KOOPS HWP, 1994, JPN J APPL PHYS, V33, P1345

[2] NEW SELECTIVE DEPOSITION TECHNOLOGY BY ELECTRON-BEAM INDUCED SURFACE-REACTION [J].

MATSUI, S ;

MORI, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :299-304

[3]

PARK YK, IN PRESS NUCL INSTR

[4]

TAKAI M, 1994, NUCL INSTRUM METH B, V85, P664

[5] Modification of field emitter array tip shape by focused ion-beam irradiation [J].

Takai, M ;

Kishimoto, T ;

Yamashita, M ;

Morimoto, H ;

Yura, S ;

Hosono, A ;

Okuda, S ;

Lipp, S ;

Frey, L ;

Ryssel, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :1973-1976

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