Modification of field emitter array tip shape by focused ion-beam irradiation

被引：27

作者：

Takai, M

Kishimoto, T

Yamashita, M

Morimoto, H

Yura, S

Hosono, A

Okuda, S

Lipp, S

Frey, L

Ryssel, H

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] MITSUBISHI ELECTR CORP,ADV TECHNOL R&D CTR,AMAGASAKI,HYOGO 661,JAPAN

[3] UNIV ERLANGEN NURNBERG,FRAUNHOFER INST INTEGRIETE SCHALTUNGEN,D-91058 ERLANGEN,GERMANY

[4] UNIV ERLANGEN NURNBERG,LEHRSTUHL ELEKTR BAUELEMENTE,D-91058 ERLANGEN,GERMANY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tip shapes of Si field emitter arrays, fabricated by a conventional dry etching process, have been modified by focused ion-beam (FIB) irradiation to obtain a sharp cone shape. Flat-topped Si tips could be sharpened by localized sputtering using FIBs for a short time. Tip shape inspections and repairs were also performed using a FIB system combined with an electron-beam column to remove metal residues and melted emitters. (C) 1996 American Vacuum Society.

引用

页码：1973 / 1976

页数：4

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