ENHANCEMENT IN EMISSION CURRENT FROM DRY-PROCESSED N-TYPE SI FIELD EMITTER ARRAYS AFTER TIP ANODIZATION

被引：19

作者：

TAKAI, M

YAMASHITA, M

WILLE, H

YURA, S

HORIBATA, S

OTOTAKE, M

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] MITSUBISHI ELECTR CORP,MAT & ELECTR DEVICES LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.587966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

n-type porous Si field emitter arrays (FEAs) have been fabricated by tip surface anodization to improve the emission characteristics. The gate voltage required for emission could be lowered by tip anodization and the emission current was enhanced by a factor of up to 10. Fowler-Nordheim plots for the FEAs before and after tip anodization revealed that the work function of the tips could be decreased and the emission from various FEAs with initially different characteristics could be homogeneously improved by tip surface anodization.

引用

页码：441 / 444

页数：4

共 9 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].