ENHANCED ELECTRON-EMISSION FROM N-TYPE POROUS SI FIELD EMITTER ARRAYS

被引：29

作者：

TAKAI, M

YAMASHITA, M

WILLE, H

YURA, S

HORIBATA, S

OTOTAKE, M

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] MITSUBISHI ELECTR CORP,MAT & ELECTR DEVICES LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.114043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tip surfaces of n-type Si field emitter arrays (FEAs) have been anodized to obtain n-type porous layers on the top surfaces of the Si emitters. The gate voltage required for emission could be lowered by tip anodization and the emission current was enhanced by a factor of up to 10. Fowler-Nordheim plots for the FEAs before and after tip anodization revealed that the work function of the tip could be decreased and the field conversion factor could be increased by the process. © 1995 American Institute of Physics.

引用

页码：422 / 423

页数：2

共 7 条

[1] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J].