SEMICONDUCTOR FIELD-EMISSION PHOTOCATHODE

被引：75

作者：

SCHRODER, DK ^{[1
]}

THOMAS, RN ^{[1
]}

VINE, J ^{[1
]}

NATHANSON, HC ^{[1
]}

机构：

[1] WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 12期

关键词：

D O I：

10.1109/T-ED.1974.18055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：785 / 798

页数：14

共 36 条

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[4] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J].

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[5]

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[7] INFLUENCE OF BULK AND SURFACE PROPERTIES ON IMAGE SENSING SILICON DIODE ARRAYS [J].

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CASEY, HC ;

DALTON, JV ;

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[8] CORRECTED VALUES OF FOWLER-NORDHEIM FIELD EMISSION FUNCTIONS V(Y) AND S(Y) [J].

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PHYSICAL REVIEW, 1953, 90 (04) :515-515

[9]

Busch G., 1963, PHYS KONDENS MATER, V1, P367

[10] MULTINEEDLE FIELD EMISSION FROM NI-W EUTECTIC [J].

CLINE, HE .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :76-&

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