Tunable graphene system with two decoupled monolayers

被引:97
作者
Schmidt, H. [1 ]
Luedtke, T. [1 ]
Barthold, P. [1 ]
McCann, E. [2 ]
Fal'ko, V. I. [2 ]
Haug, R. J. [1 ]
机构
[1] Leibniz Univ Hannover, Inst Festkorperphys, Appelstr 2, D-30167 Hannover, Germany
[2] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1063/1.3012369
中图分类号
O59 [应用物理学];
学科分类号
摘要
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3012369]
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页数:3
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