Selective chemical etching of hexagonal boron nitride compared to cubic boron nitride

被引：16

作者：

Harris, SJ

Weiner, AM

Doll, GL

Meng, WJ

机构：

[1] Phys. and Phys. Chemistry Department, General Motors R and D Center, Warren

来源：

JOURNAL OF MATERIALS RESEARCH | 1997年 / 12卷 / 02期

关键词：

D O I：

10.1557/JMR.1997.0060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A BN film containing comparable amounts of sp(2) and sp(3) phases was subjected to a gas-phase chemical etch in a hot-filament environment containing 1% CH4 in H-2. After a partial etch, examination by FTIR shows that the sp(2) was preferentially etched, leaving a larger sp(3) fraction than in the unetched film. The possibility that preferential etching could be used to increase the purity of cBN films is discussed.

引用

页码：412 / 415

页数：4

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