Phase change memories: State-of-the-art, challenges and perspectives

被引：241

作者：

Lacaita, AL

机构：

[1] Politecn Milan, Dipartimento Elettr & Informaz, I-20133 Milan, Italy

[2] IU NET, I-20133 Milan, Italy

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 01期

关键词：

phase change memories; non-volatile memories; chalcogenide materials;

D O I：

10.1016/j.sse.2005.10.046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Among the emerging non-volatile technologies, phase change memories (PCM) are the most attractive in terms of both performance and scalability perspectives. The paper reviews the physics underlying PCM operation, the scaling potentials of these devices and some options recently proposed for the cell structure. The paper also addresses the main challenges for the PCM to become fully competitive with standard Flash technology. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：24 / 31

页数：8

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