Electromigration path in Cu thin-film lines

被引:315
作者
Hu, CK [1 ]
Rosenberg, R [1 ]
Lee, KY [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
关键词
D O I
10.1063/1.123974
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electromigration in 0.15-10 mu m wide and 0.3 mu m thick Cu lines deposited by physical vapor deposition has been investigated using both resistance and edge displacement techniques in the sample temperature range 255-405 degrees C. For wide polycrystalline lines (>1 mu m), the dominant diffusion mechanism is a mixture of grain boundary and surface diffusion, while in narrow lines (<1 mm) the dominant mechanism is surface transport. The activation energy for grain-boundary transport is approximately 0.2 eV higher than that of surface transport. (C) 1999 American Institute of Physics. [S0003-6951(99)03920-0].
引用
收藏
页码:2945 / 2947
页数:3
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