InxGa1-xN/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1-xN

被引：36

作者：

Manz, C ^{[1
]}

Kunzer, M ^{[1
]}

Obloh, H ^{[1
]}

Ramakrishnan, A ^{[1
]}

Kaufmann, U ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 26期

关键词：

D O I：

10.1063/1.124247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deep, yellow photoluminescence band well known in GaN has been studied in InxGa1-xN (x less than or equal to 0.14) grown pseudomorphically on GaN. The peak energy E-p of the band is found to shift gradually to the red with increasing x according to E-p = 2.20-2.02x (eV). As in the case of GaN, the deep band in InxGa1-xN is assigned to shallow donor-deep acceptor pair recombination. The data show that the deep acceptor level does not follow the valence band edge. It is therefore assumed to be pinned to a reference level common to GaN and InxGa1-xN. The band offsets between GaN and strained InxGa1-xN evaluated under this assumption, are found to be given by Delta E-c(x)approximate to 2.02x (eV) and Delta E-v(x)approximate to 1.26x (eV) for x less than or equal to 0.14. (C) 1999 American Institute of Physics. [S0003-6951(99)02826-0].

引用

页码：3993 / 3995

页数：3

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