Yellow luminescence and related deep states in undoped GaN

被引：201

作者：

Calleja, E ^{[1
]}

Sanchez, FJ ^{[1
]}

Basak, D ^{[1
]}

SanchezGarcia, MA ^{[1
]}

Munoz, E ^{[1
]}

Izpura, I ^{[1
]}

Calle, F ^{[1
]}

Tijero, JMG ^{[1
]}

SanchezRojas, JL ^{[1
]}

Beaumont, B ^{[1
]}

Lorenzini, P ^{[1
]}

Gibart, P ^{[1
]}

机构：

[1] CNRS,CRHEA,F-06560 VALBONNE,FRANCE

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.55.4689

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photocapacitance spectra in undoped, metal-organic vapor-phase-epitaxy-grown GaN layers, in a range of a photon energies from 0.6 to 3.5 eV, reveal two main persistent features: a broad increase of the capacitance from 2.0 to 2.5 eV, and a steep decrease at 1 eV, only observed after a previous Light exposure to photon energies above 2.5 eV. A deep trap (E(v)+1 eV) that captures photoelectrons from the valence band, after being emptied with photons above 2.5 eV, is proposed as the origin of these features. Optical-current deep-level transient spectroscopy results also show the presence of a trap at 0.94 eV above the valence band, only detected after light excitation with photon energies above 2.5 eV. A correlation is found between the ''yellow band'' luminescence intensity at 2.2 eV and the amplitude of the photocapacitance decrease at 1 eV, pointing to a deep trap at 1 eV above the valence band as the recombination path for the yellow band. The detection of the yellow band with below-the-gap photoluminescence excitation supports the proposed model.

引用

页码：4689 / 4694

页数：6

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