Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO

被引：179

作者：

Ohashi, N ^{[1
]}

Ishigaki, T ^{[1
]}

Okada, N ^{[1
]}

Sekiguchi, T ^{[1
]}

Sakaguchi, I ^{[1
]}

Haneda, H ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 16期

关键词：

D O I：

10.1063/1.1470703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A pulse-modulated plasma irradiation technique was applied to hydrogenation of ZnO. Three kinds of ZnO samples were employed to investigate the electronic state of hydrogen in ZnO. Secondary-ion-mass-spectroscopy analysis using isotope tracer revealed that the surface layer to 100 nm was doped with hydrogen after the irradiation and its concentration was in the order of 10(16) cm(-3). The efficiency of band edge emission was increased by the hydrogenation. However, the the degree of the improvements depended on impurity and defect concentration in the original samples. It was concluded that hydrogen in ZnO passivates deep donor and acceptor states by electron transfer from hydrogen to the defects. (C) 2002 American Institute of Physics.

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页码：2869 / 2871

页数：3

相关论文

共 18 条

[1] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[2] Generation of pulse-modulated induction thermal plasma at atmospheric pressure [J].

Ishigaki, T ;

Fan, XB ;

Sakuta, T ;

Banjo, T ;

Shibuya, Y .

APPLIED PHYSICS LETTERS, 1997, 71 (26) :3787-3789

[3] Nonthermal and nonequilibrium effects in high-power pulsed ICP and application to surface modification of materials [J].

Ishigaki, T ;

Okada, N ;

Ohashi, N ;

Haneda, H ;

Sakuta, T .

PURE AND APPLIED CHEMISTRY, 2002, 74 (03) :435-439

[4] Surface modification of titanium oxide in pulse-modulated induction thermal plasma [J].

Ishigaki, T ;

Haneda, H ;

Okada, N ;

Ito, S .

THIN SOLID FILMS, 2001, 390 (1-2) :20-25

[5] ZNO LASER BY ELECTRON BEAM EXCITATION [J].

IWAI, S ;

NAMBA, S .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :354-&

[6]

KLINGSHIM CF, 1997, SEMICONDUCTOR OPTICS, P208

[7] LUMINESCENCE OF ZNO UNDER HIGH ONE-QUANTUM AND 2-QUANTUM EXCITATION [J].

KLINGSHIRN, C .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02) :547-556

[8] First-principles study of native point defects in ZnO [J].

Kohan, AF ;

Ceder, G ;

Morgan, D ;

Van de Walle, CG .

PHYSICAL REVIEW B, 2000, 61 (22) :15019-15027

[9] Band-edge emission of undoped and doped ZnO single crystals at room temperature [J].

Ohashi, N ;

Sekiguchi, T ;

Aoyama, K ;

Ohgaki, T ;

Terada, Y ;

Sakaguchi, I ;

Tsurumi, T ;

Haneda, H .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) :3658-3663

[10] Yellow emission from zinc oxide giving an electron spin resonance signal at g=1.96 [J].

Ohashi, N ;

Nakata, T ;

Sekiguchi, T ;

Hosono, H ;

Mizuguchi, M ;

Tsurumi, T ;

Tanaka, J ;

Haneda, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (2A) :L113-L115