Enhanced Performance in Perovskite Organic Lead Iodide Heterojunction Solar Cells with Metal-Insulator-Semiconductor Back Contact

被引：34

作者：

Shi Jiang-Jian ^{[1
,2
,3
]}

Dong Wan ^{[4
]}

Xu Yu-Zhuan ^{[1
,2
,3
]}

Li Chun-Hui ^{[1
,2
,3
]}

Lv Song-Tao ^{[1
,2
,3
]}

Zhu Li-Feng ^{[1
,2
,3
]}

Dong Juan ^{[1
,2
,3
]}

Luo Yan-Hong ^{[1
,2
,3
]}

Li Dong-Mei ^{[1
,2
,3
]}

Meng Qing-Bo ^{[1
,2
,3
]}

Chen Qiang ^{[4
]}

机构：

[1] Chinese Acad Sci, Key Lab Renewable Energy, Beijing 100190, Peoples R China

[2] Beijing Key Lab New Energy Mat & Devices, Beijing 100190, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[4] Beijing Inst Graph Commun, Lab Plasma Phys & Mat, Beijing 102600, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 12期

基金：

中国国家自然科学基金;

关键词：

SURFACE PASSIVATION; EFFICIENCY; DEPOSITION; CONVERSION; EMISSION; FIELD;

D O I：

10.1088/0256-307X/30/12/128402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Metal-insulator-semiconductor back contact has been employed for a perovskite organic lead iodide heterojunction solar cell, in which an ultrathin Al2O3 film as an insulating layer was deposited onto the CH3NH3PbI3 by atomic layer deposition technology. The light-to-electricity conversion efficiency of the devices is significantly enhanced from 3.30% to 5.07%. Further the impedance spectrum reveals that this insulating layer sustains part of the positive bias applied in the absorber region close to the back contact and decreases the carrier transport barrier, thus promoting transportation of carriers.

引用

页数：4

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