Initial adsorption configurations of acetylene molecules on the Si(001) surface

被引：65

作者：

Kim, W ^{[1
]}

Kim, H ^{[1
]}

Lee, G ^{[1
]}

Hong, YK ^{[1
]}

Lee, K ^{[1
]}

Hwang, C ^{[1
]}

Kim, DH ^{[1
]}

Koo, JY ^{[1
]}

机构：

[1] Korea Res Inst Stand & Sci, Taejon 305600, South Korea

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.64.193313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Initial adsorption configurations of acetylene molecules on the Si(001) surface are investigated by scanning tunneling microscopy (STM) and ab initio pseudopotential calculations. Three distinctive features are observed in the STM images at low coverage. The comparison of the atomic resolution STM images with the simulation reveals that there are basically mo kinds of di-sigma bonding configurations: (i) on-top over a single dimer and (ii) end-bridge between two successive dimers in the same dimer row. The third feature is identified to be a pair of end-bridge di-sigma configurations occupying the same two dimers. The tetra-sigma bonding configurations are not found. The existence of the two kinds of di-sigma bonding configurations can resolve the apparently conflicting results of the existing studies.

引用

页数：4

共 38 条

[1] STUDIES OF SIC FORMATION ON SI (100) BY CHEMICAL VAPOR-DEPOSITION [J].