The application of Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine, amino-tri-tert-butyl-phthalocyanine, in diodes and in all organic field-effect-transistors

被引：34

作者：

Hu, WP ^{[1
]}

Liu, YQ ^{[1
]}

Xu, Y ^{[1
]}

Liu, SG ^{[1
]}

Zhou, SQ ^{[1
]}

Zhu, DB ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China

来源：

SYNTHETIC METALS | 1999年 / 104卷 / 01期

基金：

中国国家自然科学基金;

关键词：

phthalocyanine; Langmuir-Blodgett films; diode; transistor;

D O I：

10.1016/S0379-6779(99)00036-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amino-tri-tert-butyl-phthalocyanine (AmBuPc) was used as the semiconductor thin layers in model Schottky diode and all organic field-effect transistor (OFET). The diode cell showed a rectifying effect with a rectification ratio of 60 at +/-3.2 V. The ideality factors were 1.38 in the low voltage region and 3.09 in the high voltage region, respectively. The results of OFET proved that AmBuPc Langmuir-Blodgett (LB) films could be used as the semiconducting layer of OFET, and the OFET could function as a p-channel accumulation device. From the OFET electrical characteristics, the channel carrier mobility is calculated to be about 5.2 X 10(-6) cm(2) V-1 s(-1), which is higher than that of vacuum-deposited film OFET (7.8 X 10(-7) cm(2) V-1 s(-1)) utilizing the same polymer. This phenomenon can be explained as the highly ordered structure of AmBuPc molecules in the LB films. This suggests that a wide conduction channel is able to form in this all organic device, which provides a new method to simplify the fabrication process of OFET and improve their properties. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：19 / 26

页数：8

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