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Arsenic mediated reconstructions on cubic (001) GaN
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APPLIED PHYSICS LETTERS,
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MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN FILMS ON GAN/SIC SUBSTRATES
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
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High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2x2) and (4x4) reflection high energy electron diffraction patterns
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
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