Comparison of phosphorus gettering for different multicrystalline silicon

被引：7

作者：

Boudaden, J

Monna, R

Loghmarti, M

Muller, JC

机构：

[1] CNRS, Lab PHASE, F-67037 Strasbourg, France

[2] Fac Sci Rabat, Phys Mat Lab, Rabat, Morocco

[3] Photowatt Int SA, F-38300 Bourgoin Jallieu, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 72卷 / 1-4期

关键词：

multicrystalline silicon; electromagnetic casting process; phosphorus gettering; photoconductivity decay technique; rapid thermal processing;

D O I：

10.1016/S0927-0248(01)00186-6

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The influence of a rapid thermal treatment on multicrystalline silicon produced by ElectroMagnetic Casting process (Emix(R) and Sitix(R)) and by directional solidification (Polix(R)), are investigated and compared in this paper, We have studied bifacial diffusion of phosphorus in this multicrystalline silicon and its gettering effect on the minority carrier lifetime measured by the photoconductivity decay technique. The diffusion is carried out by using a tungsten lamps furnace (rapid thermal processing (RTP)). This study shows an important lifetime improvement of multicrystalline silicon material produced by cold crucible casting compared to directional solidification. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：381 / 387

页数：7

共 15 条

[1]

BOUDADEN J, 1988, 16 EUR PHOT SOL EN C, P1723

[2] Continuous solidification of photovoltaic multicrystalline silicon from an inductive cold crucible [J].